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Package Marking and Ordering Information
Part Number
FQPF33N10L
Top Mark
FQPF33N10L
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 100 V, V GS = 0 V
V DS = 80 V, T C = 150°C
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
100
--
--
--
--
--
--
0.09
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 9 A
V GS = 5 V, I D = 9 A
V DS = 30 V, I D = 9 A
1.0
--
--
--
0.039
0.043
22
2.0
0.052
0.055
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
1250
305
70
1630
400
90
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 50 V, I D = 33 A,
R G = 25 Ω
V DS = 80 V, I D = 33 A,
V GS = 5 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
17
470
70
120
30
4.7
16
45
950
150
250
40
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
18
72
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 18 A
V GS = 0 V, I S = 33 A,
dI F / dt = 100 A/ μ s
--
--
--
--
90
0.26
1.5
--
--
V
ns
μ C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 2.0 mH, I AS = 18 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C.
3. I SD ≤ 33 A, di/dt ≤ 300 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially Independent of Operating Temperature.
?2000 Fairchild Semiconductor Corporation
FQPF33N10L Rev. C1
2
www.fairchildsemi.com
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